2 edition of Characterization of amorphous-crystalline silicon heterojunctions using constant photocurrent method. found in the catalog.
Characterization of amorphous-crystalline silicon heterojunctions using constant photocurrent method.
Written in English
Amorphous-crystalline silicon (a-Si:H/c-Si) heterojunctions have recently drawn much attention owing to their low-temperature fabrication and high-efficiency photovoltaics. a-Si:H/c-Si heterojunctions were studied for the first time using the constant photocurrent method (CPM). The doping concentration in the p-type a-Si:H was varied. CPM derived absorption for energies greater than 1.4 eV is observed to increase with decreasing dopant concentration in the p- layer. This is attributed to a decrease in the density of defect states in the amorphous layer and the interface. A model is proposed wherein the amorphous layer and the interface constitute one absorbing layer while the crystalline substrate forms the other absorbing layer. A combined defect density in the amorphous layer and interface of 2.8x1018 cm-3 eV-1 at 0.4 eV from the valence band edge was measured for our best device. By comparing the combined defect density with that of a single amorphous layer the defect density at the interface is inferred to be 5x1012 cm -2.
|The Physical Object|
|Number of Pages||102|
Comparison analysis of Orifice metering of natural gas and other related hydrocarbon fluids
The character and importance of agriculture, and the means and efforts which are and should be directed to its improvement
The lost towns and roads of America.
Trademarks and brand management
Proceedings 20th IEEE International Conference on Distributed Computing Systems (International Conference on Distributed Computing Systems//Proceedings)
National electrical code.
handbook of Greek art
Oregon: Pendleton : 1:100,000-scale topographic map
Whos afraid of the big bad wolf?